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NJW0281G - Complementary NPN?PNP Power Bipolar Transistors

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ON Semiconductor

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NJW0281G Complementary NPN?PNP Power Bipolar Transistors by ON Semiconductor - Datasheet Preview — Datasheet preview – NJW0281G

Datasheet Details

Part number	NJW0281G
Manufacturer	ON Semiconductor
File Size	170.59 KB
Description	Complementary NPN?PNP Power Bipolar Transistors
Datasheet	NJW0281G Datasheet
Note	This datasheet PDF includes multiple part numbers: NJW0281G, NJW0302G. Please refer to the document for exact specifications by model.
Additional preview pages of the NJW0281G datasheet.

Product details

Features

Exceptional Safe Operating Area.
NPN/PNP Gain Matching within 10% from 50 mA to 3 A.
Excellent Gain Linearity.
High BVCEO.
High Frequency.
These Devices are Pb-Free and are RoHS Compliant Benefits.
Reliable Performance at Higher Powers.
Symmetrical Characteristics in Complementary Configurations.
Accurate Reproduction of Input Signal.
Greater Dynamic Range.
High Amplifier Bandwidth.

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Published: Sep 12, 2010 |