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NJW0281G - Complementary NPN?PNP Power Bipolar Transistors

This page provides the datasheet information for the NJW0281G, a member of the NJW0302G Complementary NPN?PNP Power Bipolar Transistors family.

Datasheet Summary

Features

  • Exceptional Safe Operating Area.
  • NPN/PNP Gain Matching within 10% from 50 mA to 3 A.
  • Excellent Gain Linearity.
  • High BVCEO.
  • High Frequency.
  • These Devices are Pb-Free and are RoHS Compliant Benefits.
  • Reliable Performance at Higher Powers.
  • Symmetrical Characteristics in Complementary Configurations.
  • Accurate Reproduction of Input Signal.
  • Greater Dynamic Range.
  • High Amplifier Bandwidth.

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Datasheet preview – NJW0281G

Datasheet Details

Part number NJW0281G
Manufacturer ON Semiconductor
File Size 170.59 KB
Description Complementary NPN?PNP Power Bipolar Transistors
Datasheet download datasheet NJW0281G Datasheet
Additional preview pages of the NJW0281G datasheet.

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Full PDF Text Transcription

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Complementary NPN‐PNP Power Bipolar Transistors NJW0281G (NPN), NJW0302G (PNP) These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.
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