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NJW0302G PNP Power Transistor

NJW0302G Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min). Good Linearity of hFE. Complement to Type NJW0281G. Minimum Lot-to-.

NJW0302G Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15

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Datasheet Details

Part number
NJW0302G
Manufacturer
INCHANGE
File Size
202.32 KB
Datasheet
NJW0302G-INCHANGE.pdf
Description
PNP Power Transistor

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PNP Power Transistor INCHANGE
INCHANGE NJW0302G-like datasheet