NJW0302G Datasheet - INCHANGE

NJW0302G, PNP Power Transistor

isc Silicon PNP Power Transistor DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) *Good Linearity of hFE *Co

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15

NJW0302G-INCHANGE.pdf