NJW0281G Datasheet - Inchange Semiconductor

NJW0281G, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor NJW0281G DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) *Good Linearity of hFE

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

NJW0281G-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

NJW0281G

Manufacturer:

Inchange Semiconductor

File Size:

213.22 KB

Description:

Silicon npn power transistor.

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NJW0281G Silicon NPN Power Transistor Inchange Semiconductor

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