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NJW0281G Silicon NPN Power Transistor

NJW0281G Description

isc Silicon NPN Power Transistor NJW0281G .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min). Good Linearity of hFE. Complement to Type NJW0302G. Minimum Lot-to-Lo.

NJW0281G Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

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Datasheet Details

Part number
NJW0281G
Manufacturer
Inchange Semiconductor
File Size
213.22 KB
Datasheet
NJW0281G-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor NJW0281G-like datasheet