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NJW0281G - Silicon NPN Power Transistor

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Datasheet Details

Part number NJW0281G
Manufacturer Inchange Semiconductor
File Size 213.22 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet NJW0281G-InchangeSemiconductor.pdf

NJW0281G Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) Good Linearity of hFE Complement to Type NJW0302G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector

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