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NJW0281G Datasheet - Inchange Semiconductor

NJW0281G Silicon NPN Power Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) *Good Linearity of hFE *Complement to Type NJW0302G *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high fidelity audio amplifier and other linear applic.

NJW0281G Datasheet (213.22 KB)

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Datasheet Details

Part number:

NJW0281G

Manufacturer:

Inchange Semiconductor

File Size:

213.22 KB

Description:

Silicon npn power transistor.

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NJW0281G Silicon NPN Power Transistor Inchange Semiconductor

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