NJW0302 Datasheet - INCHANGE

NJW0302, PNP Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor NJW0302 DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-250V(Min)

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15

NJW0302-INCHANGE.pdf