NJW0281 Datasheet - INCHANGE

NJW0281, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min)

Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

NJW0281-INCHANGE.pdf