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NJW0281 NPN Transistor

NJW0281 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min). Good Linearity of hFE. Complement to Type NJW0302. Minimum Lot-to-Lot.

NJW0281 Applications

* Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A I

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Datasheet Details

Part number
NJW0281
Manufacturer
INCHANGE
File Size
211.05 KB
Datasheet
NJW0281-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE NJW0281-like datasheet