NJW21193G
116.05kb
Silicon power transistors.
TAGS
📁 Related Datasheet
NJW21193G - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
NJW21193G
DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum L.
NJW21194G - Silicon Power Transistors
(ON Semiconductor)
NJW21193G (PNP) NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically desi.
NJW21194G - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
NJW21194G
DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum L.
NJW2303 - BASE BAND INTERFACE
(New Japan Radio)
.
NJW2307 - FM Modulation/Demodulation
(New Japan Radio)
NJW2307
FM Modulation/Demodulation with PLL
GENERAL DESCRIPTION
NJW2307 is a FM modulation / demodulation IC for audio signal in full duplex mu.
NJW2311 - Phase Shifter-less Wide Band FM IF Demodulator IC
(JRC)
NJW2311
Phase Shifter-less Wide Band FM IF Demodulator IC for Voice
■ FEATURES
● Unnecessary External phase shifter (CD or IFT)
● Auto IF detectio.
NJW0281 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
NJW0281
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Li.
NJW0281G - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
NJW0281G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Comple.
NJW0281G - NPN-PNP Power Bipolar Transistors
(ON Semiconductor)
NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These plementary devices are lower power versions of the popular NJ.
NJW0302 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
NJW0302
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-250V(Min) ·Good L.