NJW2303 Datasheet, Interface, New Japan Radio

PDF File Details

Part number:

NJW2303

Manufacturer:

New Japan Radio

File Size:

Direct Link

Download:

📄 Datasheet

Description:

Base band interface.

Datasheet Preview: NJW2303 📥 Download PDF (Direct Link)

TAGS

NJW2303
BASE
BAND
INTERFACE
New Japan Radio

📁 Related Datasheet

NJW2307 - FM Modulation/Demodulation (New Japan Radio)
NJW2307 FM Modulation/Demodulation with PLL  GENERAL DESCRIPTION NJW2307 is a FM modulation / demodulation IC for audio signal in full duplex mu.

NJW2311 - Phase Shifter-less Wide Band FM IF Demodulator IC (JRC)
NJW2311 Phase Shifter-less Wide Band FM IF Demodulator IC for Voice ■ FEATURES ● Unnecessary External phase shifter (CD or IFT) ● Auto IF detectio.

NJW21193G - Silicon Power Transistors (ON Semiconductor)
NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically desi.

NJW21193G - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor NJW21193G DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum L.

NJW21194G - Silicon Power Transistors (ON Semiconductor)
NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically desi.

NJW21194G - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor NJW21194G DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum L.

NJW0281 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Li.

NJW0281G - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor NJW0281G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Comple.

NJW0281G - NPN-PNP Power Bipolar Transistors (ON Semiconductor)
NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These plementary devices are lower power versions of the popular NJ.

NJW0302 - PNP Transistor (INCHANGE)
isc Silicon PNP Power Transistor INCHANGE Semiconductor NJW0302 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-250V(Min) ·Good L.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts