T1200EB45E Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T1200EB45E, Insulated Gate Bi-Polar Transistor

Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=1