T1200TD25A Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T1200TD25A, Insulated Gate Bi-Polar Transistor

Date:- 16 Dec, 2014 Data Sheet Issue:- A1 Advance data Insulated Gate Bi-Polar Transistor Type T1200TD25A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current