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AP75T10GS-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Advanced Power Electronics Corp. AP75T10GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10GP) are available for low-profile applications. BVDSS RDS(ON) ID G D S 100V 15mΩ 65A TO-220(P) GD S TO-263(S) Absolute Maximum Ratings@Tj=25o.