Datasheet Details
| Part number | AP80N30W |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 199.38 KB |
| Description | N-Channel MOSFET |
| Download | AP80N30W Download (PDF) |
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Overview: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp.
| Part number | AP80N30W |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 199.38 KB |
| Description | N-Channel MOSFET |
| Download | AP80N30W Download (PDF) |
|
|
|
AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device.
G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current 1 http://www.DataSheet4U.net/ Rating 300 ±30 88 270 88 1 Units V V A A A A W A mJ ℃ ℃ Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Avalanche Current 3 3 270 150 30 45 -55 to 150 150 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.833 40 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805132 datasheet pdf - http://www.DataSheet4U.net/ AP80N30W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=125 C) o Test Conditions VGS=0V, ID=10mA 2 Min.
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