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AP80N03GS-HF Datasheet N-channel Insulated Gate Bipolar Transistor

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP80N03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D BVDSS 30V ▼ Fast Switching Characteristic RDS(ON) 8mΩ ▼ Simple Drive Requirement G ID ▼.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

G DS TO-220(P) The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.

AP80N03GS-HF Distributor