DESCRIPTION
AP80N06HPIT 60V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 60V ID =80A RDS(ON) < 8.5mΩ @ VGS=10V （Type：7.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP80N06HP TO-220-3L AP80N06HP XXX YYYY AP80N06HT TO-263-3L AP80N06HT XXX YYYY ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Value VDS Drain source voltage 60 VGS Gate source voltage ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 80 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 52 IDM Pulsed drain current2) 250 IS Diode forward current 37 PD Power dissipation 70 EAS Single pulsed avalanche energy) 100 Tstg，Tj Operation and storage temperature -55 to 150 RθJC Thermal resistance, junction-case 2.14 RθJA Thermal resistance, junction-ambient4) 62.5 Qty(PCS) 1000 800 Unit V V A A A A W mJ ℃ ℃/W ℃/W 1 AP80N06HP/T REV1.0 永源微電子科技有限公司 AP80N06HPIT 60V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
