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AP80N06HT - 60V N-Channel Enhancement Mode MOSFET

Download the AP80N06HT datasheet PDF. This datasheet also covers the AP80N06HP variant, as both devices belong to the same 60v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

or in other Switching application.

Key Features

  • VDS = 60V ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Type:7.5mΩ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP80N06HP-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP80N06HT
Manufacturer APM
File Size 771.84 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP80N06HT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description AP80N06HPIT 60V N-Channel Enhancement Mode MOSFET The AP80N06HP/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Type:7.