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AP80N03BDF - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP80N03BDF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =80A RDS(ON) < 3.8mΩ @ VGS=10V （Type：3.0mΩ）.

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Datasheet Details

Part number AP80N03BDF
Manufacturer APM
File Size 975.66 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP80N03BDF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP80N03BDF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03BDF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =80A RDS(ON) < 3.8mΩ @ VGS=10V （Type：3.0mΩ） Application Buck Boost Package Marking and Ordering Information Product ID Pack Marking AP80N03BDF PDFN3*3-8L AP80N03BDF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max.