DESCRIPTION
GENERAL FEATURES
VDS = 30V ID =80A RDS(ON) < 3.8mΩ @ VGS=10V （Type：3.0mΩ） Application Buck Boost Package Marking and Ordering Information Product ID Pack Marking AP80N03BDF PDFN3*3-8L AP80N03BDF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS VGSS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TJ TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case 30 ±20 80 54 344 45 25 43.1 -55 to 150 25 2.9 Qty(PCS) 5000 Units V V A A A mJ A W °C °C/W ℃/W AP80N03BDF REV1.0 永源微電子科技有限公司 1 AP80N03BDF 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown...
APM
