Datasheet Summary
30V N-Channel Enhancement Mode MOSFET
Description The AP80N03BDF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 30V ID =80A RDS(ON) < 3.8mΩ @ VGS=10V （Type：3.0mΩ） Application
Buck Boost
Package Marking and Ordering Information
Product ID
Pack
Marking
PDFN3- 3-8L
AP80N03BDF XXX...
