Datasheet Summary
Description
30V N-Channel Enhancement Mode MOSFET
The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS=30V ID =80A
RDS(ON) < 6.5mΩ @ VGS=10V （Type：4.0mΩ）
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
TO-252-3L
Marking AP80N03D XXXX YYYY
Qty(PCS)...
