DESCRIPTION
AP80N03D 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=30V ID =80A RDS(ON) < 6.5mΩ @ VGS=10V （Type：4.0mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP80N03D TO-252-3L Marking AP80N03D XXXX YYYY Qty(PCS) 2500 ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=75℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ PD@TA=25℃ Total Power Dissipation4 Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 30 ±20 80 50 240 56 15 46 2.72 -55 to 150 -55 to 150 62 2.72 Units V V A A A mJ A W W ℃ ℃ ℃/W ℃/W AP80N03D RVE1.1 永源微電子科技有限公司 1 AP80N03D 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
