AP83T03GJB Datasheet - Advanced Power Electronics

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP83T03GJB General Description

AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package .

AP83T03GJB Datasheet (59.70 KB)

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Datasheet Details

Part number:

AP83T03GJB

Manufacturer:

Advanced Power Electronics

File Size:

59.70 KB

Description:

N-channel insulated gate bipolar transistor.
Advanced Power Electronics Corp. AP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requ.

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AP83T03GJB N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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AP83T03GJB General Description

Datasheet Details

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