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AP83T03GM-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP83T03GM-HF

Datasheet Details

Part number AP83T03GM-HF
Manufacturer Advanced Power Electronics
File Size 63.04 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP83T03GM-HF Datasheet
Additional preview pages of the AP83T03GM-HF datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP83T03GM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free D D D D SO-8 G SS S Description AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 30V 6mΩ 16A D S Absolute Maximum Ratings@Tj=25oC.
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