| Part number | AP83T03GJB |
|---|---|
| Datasheet | AP83T03GJB-AdvancedPowerElectronics.pdf |
| File Size | 59.70 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all mercial-industrial through-hole applications without leadcutted.
See all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP83T03GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP83T03GMT-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03AGH-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP83T03AGMT-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP83T02GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T02GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
