Datasheet4U Logo Datasheet4U.com

AP83T03GJB - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Description

AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – AP83T03GJB

Datasheet Details

Part number AP83T03GJB
Manufacturer Advanced Power Electronics
File Size 59.70 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP83T03GJB Datasheet
Additional preview pages of the AP83T03GJB datasheet.

📁 Similar Datasheet

  • AP8366 - AC-DC PWM CONTROLLER (AiT Semiconductor)
  • AP8003 - Fixed 5V Output Non-Isolated AC-DC Conversion (Chipown)
  • AP8007 - AC-DC PWM CONTROLLER (AiT Semiconductor)
  • AP8010 - AC-DC PWM CONTROLLER (AiT Semiconductor)
  • AP8012 - AC-DC PWM CONTROLLER (AiT Semiconductor)
  • AP8012 - GREEN POWER OFF LINE SMPS PRIMARY SWITCHE (Chipown)
  • AP8012A - PWM CONTROLLER (AiT Semiconductor)
  • AP8012C - Low Standby Power Offline Switching Power Supply (Chipown)
  • AP8012H - Low Standby-Power Off-line PWM converters (Chipown)
  • AP8022 - LOW STANDBY-POWER OFF-LINE PWM CONVERTERS (AiT Semiconductor)
Other Datasheets by Advanced Power Electronics

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP83T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free S Description AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted. BVDSS RDS(ON) ID 30V 6mΩ 75A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol .
Published: |