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AP83T03AGMT-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP83T03AGMT-HF

Datasheet Details

Part number AP83T03AGMT-HF
Manufacturer Advanced Power Electronics
File Size 58.37 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP83T03AGMT-HF Datasheet
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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP83T03AGMT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D BVDSS ▼ SO-8 Compatible with Heatsink RDS(ON) ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G ID S Description AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
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