Datasheet Details
| Part number | AP83T03AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.42 KB |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Download | AP83T03AGH-HF Download (PDF) |
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| Part number | AP83T03AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.42 KB |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Download | AP83T03AGH-HF Download (PDF) |
|
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AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
Advanced Power Electronics Corp.
AP83T03AGH-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant &.
| Part Number | Description |
|---|---|
| AP83T03AGMT-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP83T03GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GJB | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP83T03GM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP83T03GMT-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T02GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T02GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |