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AP85L02J-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP85L02J-A, a member of the AP85L02H-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

AP88LS02 used advanced design and process to achieve low gate charge ,lower on-resistance and fast switching performance.

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

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Datasheet preview – AP85L02J-A

Datasheet Details

Part number AP85L02J-A
Manufacturer Advanced Power Electronics
File Size 71.10 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP85L02J-A Datasheet
Additional preview pages of the AP85L02J-A datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP85L02H/J-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching D G S Description AP88LS02 used advanced design and process to achieve low gate charge ,lower on-resistance and fast switching performance. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J-A) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.
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