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AP85L02J Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP85L02J datasheet PDF. This datasheet also includes the AP85L02H variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP85L02H-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP85L02J) is available for low-profile applications.

BVDSS RDS(ON) ID 25V 6mΩ 85A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient G D S TO-251(J) Rating 25 ± 20 85 53 310 96 0.77 -

Overview

AP85L02H/J Advanced Power Electronics Corp.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast.

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