AP86T02GJB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
(AP86T03GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
AP86T02GJB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
25V
RDS(ON)
6mΩ
G ID 75A
S
Description
AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
GD S
TO-251S(JB)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
AP86T02GJB Datasheet
