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AP86T02GJ - (AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP86T02GJ, a member of the AP86T02GH (AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP86T02GJ) is available for low-profile applications.

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Datasheet Details

Part number AP86T02GJ
Manufacturer Advanced Power Electronics
File Size 262.17 KB
Description (AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP86T02GJ Datasheet
Additional preview pages of the AP86T02GJ datasheet.

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Full PDF Text Transcription

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AP86T02GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 6mΩ 75A Description G The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP86T02GJ) is available for low-profile applications. G D S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 +20 75 62 300 75 0.
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