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AP86T02GJB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP86T02GJB

Datasheet Details

Part number AP86T02GJB
Manufacturer Advanced Power Electronics
File Size 98.25 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP86T02GJB Datasheet
Additional preview pages of the AP86T02GJB datasheet.

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Full PDF Text Transcription

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Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free AP86T02GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 25V RDS(ON) 6mΩ G ID 75A S Description AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol .
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