| Part number | AP86T02GJB |
|---|---|
| Datasheet | AP86T02GJB-AdvancedPowerElectronics.pdf |
| File Size | 98.25 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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AP86T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all mercialindustrial through-hole applications without lead-cutted.
See all Advanced Power Electronics Corp datasheets
| Part Number | Description |
|---|---|
| AP86T02GJ | (AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP86T02GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP86T02GH | (AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP86T02GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP86T03GH | (AP86T03GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP86T03GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP86T03GJ | (AP86T03GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP8600MT | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP8600P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80N03GP-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
