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AP90T03GH Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP90T03GJ) is available for low-profile applications.

G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 30 ± 20 75 63 350 96 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

AP90T03GH/J Pb Free Plating Product Advanced Power Electronics Corp.