AP90T03GR Description
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Value 1.3 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200120041 .. AP90T03GR @T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min.