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AP90T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP90T03GJ) is available for low-profile applications.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP90T03GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP90T03GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP90T03GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP90T03GR N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP90T03GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP90T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On- resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 4mΩ 75A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP90T03GJ) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 30 ± 20 75 63 350 96 0.