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AP90T03GS-HF Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G D S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V3 Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Rating 30 +20 75 63 350 96 3.12 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.3 40 Units ℃/W ℃/W 1 201209184 Data and specifications subject to change without notice AP90T03GS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=45A VGS=4.5V, ID=30A Min.

Overview

AP90T03GS-HF Halogen-Free Product Advanced Power Electronics Corp.