Datasheet4U Logo Datasheet4U.com

AP9408AGP Datasheet N-Channel MOSFET

Manufacturer: Advanced Power Electronics Corp

📥 Download Datasheet

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.

G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 53 33 160 44.6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.8 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810282 AP9408AGP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A Min.

Overview

AP9408AGP RoHS-compliant Product Advanced Power Electronics Corp.

More Datasheets from Advanced Power Electronics Corp

Part Number Description
AP9408AGH N-Channel MOSFET
AP9408AGI N-Channel MOSFET
AP9408AGM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9408AGM-HF N-Channel MOSFET
AP9408AGM-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9408CGM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9408GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9408GH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9408GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9408GJ-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET