Datasheet Details
| Part number | AP9575AGJ-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 95.54 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP9575AGJ-HF Download (PDF) |
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Download the AP9575AGJ-HF datasheet PDF. This datasheet also includes the AP9575AGH-HF variant, as both parts are published together in a single manufacturer document.
| Part number | AP9575AGJ-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 95.54 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP9575AGJ-HF Download (PDF) |
|
|
|
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9575AGJ) are available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 +30 -17 -11 -60 36 0.29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.5 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 201105313 AP9575AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-60V, VGS=0V VGS=+30V, VDS=0V ID=-12A VDS=-48V VGS=-10V VDS=-30V ID=-12A RG=3.3Ω,VGS=-10V RD=2.5Ω VGS=0V VDS=-25V f=1.0MHz Min.
AP9575AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP9575GM | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP9575AGJ-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGH-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGI-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575AGS-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |