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AP9575AGJ Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9575AGJ datasheet PDF. This datasheet also includes the AP9575AGH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9575AGH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP9575AGJ) are available for low-profile applications.

BVDSS RDS(ON) ID -60V 64mΩ -17A GD S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range G D S TO-251(J) Rating -60 +30 -17 -11 -60 36 0.29 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 3.5 62.5 110 Units ℃/W ℃/W ℃/W Data and specifications subject to change without notice 1 200908033 AP9575AGH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP9575AGH/J RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Higher Gate-Source Voltage D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G.