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AP9926GEO-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Advanced Power Electronics Corp. AP9926GEO-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Capable of 2.5V Gate Drive ▼ Low Drive Current ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free G2 S2 S2 D2 TSSOP-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 S1 D1 BVDSS RDS(ON) ID D1 G1 G2 S1 20V 28mΩ 4.6A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.