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AP9926A - 20V N+N-Channel Enhancement Mode MOSFET

General Description

The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =6.5A RDS(ON) < 28mΩ @ VGS=10V (Type：20mΩ) ͨʢʱ´ú.

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Datasheet Details

Part number AP9926A
Manufacturer APM
File Size 1.60 MB
Description 20V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP9926A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP9926A 20V N+N-Channel Enhancement Mode MOSFET The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =6.5A RDS(ON) < 28mΩ @ VGS=10V (Type：20mΩ) ͨʢʱ´ú Application Battery protection Load switch Wireless charging Package Marking and Ordering Information Product ID Pack AP9926A SOP-8L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Marking 9926A Rating 20 ±12 6.