AP9926A Datasheet PDF

APM AP9926A

The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

Part No.	AP9926A
Datasheet	AP9926A Download
Manufacturer	APM
Description	20V N+N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

AP9926A 20V N+N-Channel Enhancement Mode MOSFET

GENERAL FEATURES

VDS = 20V ID =6.5A RDS(ON) < 28mΩ @ VGS=10V (Type：20mΩ) Í¨Ê¢Ê±´ú Application Battery protection Load switch Wireless charging Package Marking and Ordering Information Product ID Pack AP9926A SOP-8L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Marking 9926A Rating 20 ±12 6.5 4 IDM Pulsed Drain Current2 24 PD@TA=25℃ Total Power Dissipation4 1.2 TSTG Storage Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 78 Qty(PCS) 3000 Units V V A A A W ℃ ℃/W 1 AP9926A RVE3.3 AP9926A 20V N+N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body...