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AP9926GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Advanced Power Electronics Corp. AP9926GM RoHS-compliant Product Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package D2 D2 D1 D1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 20V 30mΩ 6A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3,VGS @ 4.5V Continuous Drain Current3,VGS @ 4.