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AP9926GEM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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AP9926GEM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low www.DataSheet4U.com drive current G2 S2 D2 D1 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 30mΩ 6A ▼ Surface mount package SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±12 6 4.8 20 2 0.