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Advanced Power Electronics

AP9926M Datasheet Preview

AP9926M Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9926M
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
www.DataSheet4U.comLow drive current
Surface mount package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
30mΩ
6A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
± 12
6
4.8
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
62.5
Unit
/W
Data and specifications subject to change without notice
20020426




Advanced Power Electronics

AP9926M Datasheet Preview

AP9926M Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9926M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
www.DataSheet4U.com
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V
VGS= ± 12V
ID=6A
VDS=20V
VGS=5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- 0.1 - V/
- - 30 mΩ
- - 45 mΩ
0.5 - - V
- 15.6 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 12.5 - nC
- 1 - nC
- 6.5 - nC
- 7 - ns
- 14.5 - ns
- 19 - ns
- 12 - ns
- 355 - pF
- 190 - pF
- 85 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
Tj=25, IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad.


Part Number AP9926M
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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