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AP9962AGM-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 40V 25mΩ 7A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Rating 40 +20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200901203 AP9962AGM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.

Overview

Advanced Power Electronics Corp.

AP9962AGM-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package D2 D2 D1 D1 ▼ RoHS Compliant.

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