AP9962AGM
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G2 S2 G1 S1
G1
BVDSS RDS(ON) ID
D1 G2
S1
40V 25mΩ
7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS
ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating 40 ± 20 7 5.5 20 2
0.016 -55 to 150 -55 to 150
Value 62.5
Units V V A A A W
W/℃ ℃ ℃
Unit ℃/W
Data and specifications subject to change without notice
1...
