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Advanced Power Electronics

AP9962GH-HF Datasheet Preview

AP9962GH-HF Datasheet

N-channel Enhancement-mode Power MOSFET

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Advanced Power
Electronics Corp.
AP9962GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
D
Fast Switching Characteristic
RoHS Compliant & Halogen-Free G
S
Description
AP9962 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9962GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
GD
S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
40 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20
32
20
150
27.8
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4.5
62.5
110
Unit
/W
/W
/W
1
201408273




Advanced Power Electronics

AP9962GH-HF Datasheet Preview

AP9962GH-HF Datasheet

N-channel Enhancement-mode Power MOSFET

No Preview Available !

AP9962GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=32V, VGS=0V
VGS= +20V, VDS=0V
ID=20A
VDS=32V
VGS=4.5V
VDS=20V
ID=20A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
40 - - V
- - 20 m
- - 30 m
1 - 3V
- 19 -
S
- - 10 uA
- - +100 nA
- 13 21 nC
- 5 - nC
- 8 - nC
- 8 - ns
- 38 - ns
- 20 - ns
- 5 - ns
- 1170 1870 pF
- 180 - pF
- 115 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=32A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 24 - ns
- 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP9962GH-HF
Description N-channel Enhancement-mode Power MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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