AP9962GM Overview
Description
D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 40V 25mΩ 7A D1 D2 G1 G2 S1 S2 Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Rating 40 +20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200901202 AP9962GM Symbol Parameter Test Conditions Min.
