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Advanced Power Electronics

AP9962GMA Datasheet Preview

AP9962GMA Datasheet

N-Channel MOSFET

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Advanced Power
Electronics Corp.
AP9962GMA
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
SO-8 similar area footprint and pin assignment
Low Gate Charge
D
Fast Switching Speed
RoHS Compliant
G
S
Description
The APAK-5 package is preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
20mΩ
36A
D
S SS G
APAK-5
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient3
Rating
40
±20
36
23
120
37
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
3.4
85
Units
/W
/W
Data and specifications subject to change without notice
200523061-1/4




Advanced Power Electronics

AP9962GMA Datasheet Preview

AP9962GMA Datasheet

N-Channel MOSFET

No Preview Available !

AP9962GMA
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ±20V
ID=20A
VDS=30V
VGS=4.5V
VDS=20V
ID=20A
RG=3.3Ω,VGS=10V
RD=1Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
40 -
-
V
- 0.02 - V/
-
- 20 mΩ
-
- 30 mΩ
0.8 - 2.5 V
- 20 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 14 22 nC
-
3
- nC
-
9
- nC
-
8
- ns
- 48 - ns
- 23 - ns
-
7
- ns
- 1160 1860 pF
- 165 - pF
- 110 - pF
- 1.5 2.25 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 31 - ns
- 25 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
2/4



Part Number AP9962GMA
Description N-Channel MOSFET
Maker Advanced Power Electronics
Total Page 3 Pages
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