900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Electronics

AP9T16GH Datasheet Preview

AP9T16GH Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP9T16GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Capable of 2.5V gate drive
Single Drive Requirement
RoHS Compliant
G
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
BVDSS
RDS(ON)
ID
20V
25mΩ
25A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
Rating
20
±16
25
16
90
25
0.2
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
5
110
Units
/W
/W
Data and specifications subject to change without notice
200908052-1/4




Advanced Power Electronics

AP9T16GH Datasheet Preview

AP9T16GH Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

www.DataSheet4U.com
AP9T16GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=5V, ID=18A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±16V
ID=18A
VDS=16V
VGS=4.5V
VDS=10V
ID=18A
RG=3.3Ω,VGS=5V
RD=0.56Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 -
-V
- 0.01 - V/
- - 25 mΩ
- - 40 mΩ
0.5 - 1.5 V
- 19 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 10 16 nC
- 3 - nC
- 5 - nC
- 10 - ns
- 98 - ns
- 18 - ns
- 6 - ns
- 870 1390 pF
- 160 - pF
- 120 - pF
- 1.38 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=18A, VGS=0V
IS=18A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 19 - ns
- 10 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4


Part Number AP9T16GH
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
PDF Download

AP9T16GH Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AP9T16GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
2 AP9T16GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
3 AP9T16GH-HF-3 N-channel Enhancement-mode Power MOSFET
Advanced Power Electronics
4 AP9T16GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
5 AP9T16GJ-HF-3 N-channel Enhancement-mode Power MOSFET
Advanced Power Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy