AP9T16GH
Description
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current
Rating 20 ±16 25 16 90 25 0.2 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200908052-1/4
..
AP9T16GH/J
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS...
