Datasheet Details
| Part number | AP9T18GEH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 133.02 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP9T18GEH Datasheet
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| Part number | AP9T18GEH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 133.02 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP9T18GEH Datasheet
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 20 ±12 40 25 160 31 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ G-S Diode embedded ▼ Capable of 2.
| Part Number | Description |
|---|---|
| AP9T18GEJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GH-HF-3 | N-channel Enhancement-mode Power MOSFET |
| AP9T18GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T18GJ-HF-3 | N-channel Enhancement-mode Power MOSFET |
| AP9T15GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T15GH-HF | N-channel Enhancement mode Power MOSFET |
| AP9T15GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9T15GJ-HF | N-channel Enhancement mode Power MOSFET |