Datasheet4U Logo Datasheet4U.com

AP9T18GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9T18GJ, a member of the AP9T18GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP9T18GJ

Datasheet Details

Part number AP9T18GJ
Manufacturer Advanced Power Electronics
File Size 141.43 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9T18GJ Datasheet
Additional preview pages of the AP9T18GJ datasheet.

📁 Similar Datasheet

  • AP9050 - PROTECTION INTERFACE (Diodes Incorporated)
  • AP9060 - OVERVOLTAGE CLAMP (Diodes Incorporated)
  • AP90N03D - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP90N03NF - 30V N-Channel Enhancement Mode MOSFET (APM)
  • AP90N08NF - 85V N-Channel Enhancement Mode MOSFET (APM)
  • AP90N12D - 120V N-Channel Enhancement Mode MOSFET (APM)
  • AP90X - 90 Amps SPUD Contactor (TE)
  • AP90XB57 - 90 Amps SPUD Contactor (TE)
  • AP9101C - SINGLE CHIP SOLUTION FOR 1-CELL Li+ BATTERY PACK (Diodes)
  • AP9106 - 8-Channels Switch (BCD)
Other Datasheets by Advanced Power Electronics
  • AP9T18GJ-HF-3 - N-channel Enhancement-mode Power MOSFET
  • AP9T18GEH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9T18GEJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9T18GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9T18GH-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9T18GH-HF-3 - N-channel Enhancement-mode Power MOSFET
  • AP9T15GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9T15GH-HF - N-channel Enhancement mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 ±16 38 24 140 31.3 0.
Published: |