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AP9T18GEH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9T18GEH
Manufacturer Advanced Power Electronics
File Size 133.02 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 40A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.
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