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AP9T18GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9T18GJ datasheet PDF. This datasheet also covers the AP9T18GH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP9T18GH_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9T18GJ-HF-3 N-channel Enhancement-mode Power MOSFET
AP9T18GEH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9T18GEJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9T18GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9T18GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 ±16 38 24 140 31.3 0.
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