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AP9T19GJ Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9T19GJ datasheet PDF. This datasheet also includes the AP9T19GH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9T19GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 12 ±12 33 21 80 25 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Max.

Overview

AP9T19GH/J Pb Free Plating Product Advanced Power Electronics Corp.

▼ Low Gate Charge ▼ Capable of 2.

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