Datasheet Details
| Part number | AP9T15GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 94.60 KB |
| Description | N-channel Enhancement mode Power MOSFET |
| Download | AP9T15GH-HF Download (PDF) |
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| Part number | AP9T15GH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 94.60 KB |
| Description | N-channel Enhancement mode Power MOSFET |
| Download | AP9T15GH-HF Download (PDF) |
|
|
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Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 +16 12.5 8 60 12.5 0.1 Units V V A A A W W/ ℃ W ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 10 62.5 110 Units ℃/W ℃/W ℃/W 1 201009303 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9T15GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A Min.
20 0.5 - Typ.
AP9T15GH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Single Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 50mΩ 12.
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