900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Technology

0910-150M Datasheet Preview

0910-150M Datasheet

RF Transistor

No Preview Available !

0910 – 150M
0910-150M
150 Watts - 48 Volts, 150µs, 5%
Radar 890 - 1000 MHz
GENERAL DESCRIPTION
The 0910-150M is an internally matched, COMMON BASE transistor capable
of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5%
duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed
transistor is specifically designed for P-Band radar applications. It utilizes gold
metallization to provide high reliability.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
400 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
65 Volts
3.5 Volts
12 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pg
ηc
Pd
Rl
VSWR1
VSWRs
Power Out
Power Gain
Collector Efficiency
Pulse Droop
Input Return loss
Load Mismatch Tolerance
Load Mismatch - Stability
Note 1: Pulse condition of 150µsec, 5%.
Freq = 890 – 1000 MHz
Vcc = 48 Volts
Pin = 23 Watts
Pulse Width = 150µs
Duty Factor = 5%
Bvces
Ices
Iebo
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage
Thermal Resistance
Ic = 10 mA
Vce = 50 Volts
Vebo = 2.5 Volts
Rated Pulse Condition
MIN TYP MAX UNITS
150
210 Watts
8.1 8.5
dB
40 45
%
0.5
dB
-9
dB
3:1
2:1
65
Volts
10
mA
5.0 mA
0.48 oC/W
Issue Mar 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324




Advanced Power Technology

0910-150M Datasheet Preview

0910-150M Datasheet

RF Transistor

No Preview Available !

Performance Curves –
Pin v s. Pout
270
240
210
180
150
890 MHz
937 MHz
1000 MHz
120
90
60
30
0
36 37 38 39 40 41 42 43 44 45 46
Pin (dBm)
0910– 150M
0910-150M
Pin v s. Gain
12
11
10
9
8
7
6
5
4
890 MHz
3
937 MHz
2
1000 MHz
1
0
37
38
39
40
41
42
43
44
45
46
Pin (dBm)
Pin v s. Efficie ncy
70.00
60.00
50.00
40.00
30.00
20.00
890 MHz
937 MHz
1000 MHz
10.00
0.00
37
38
39
40
41
42
43
44
45
46
Pin (dBm)
Impedance Information
50 Ohms
Input
Matching
Circuit
ZSource
Output
Matching
Circuit
ZLoad
50 Ohms
Frequencies (MHz)
ZSource ()
890
4.0 - j4.2
937
4.0 - j3.5
1000
4.1 - j2.5
Note 2: ZLoad exclusive of C1 and C4 on the test circuit
ZLoad () 2
1.85 – j3.2
1.97 – j3.0
2.1 – j3.0
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324


Part Number 0910-150M
Description RF Transistor
Maker Advanced Power Technology
PDF Download

0910-150M Datasheet PDF






Similar Datasheet

1 0910-150M RF Transistor
Advanced Power Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy