logo

0910-150M Advanced Power Technology RF Transistor

Description The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipati...
Features ad Mismatch - Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890
  – 1000 MHz Vcc = 48 Volts Pin = 23 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices Iebo θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage Thermal Resistance Ic = 10 mA Vce = 50 Volts Vebo = 2.5 Volts Rated Pulse Condition MI...

Datasheet PDF File 0910-150M Datasheet - 108.90KB

0910-150M  






logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map