0910-150M - RF Transistor

Description

The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz.

This hermetically solder-sealed transistor is specifically designed for P-Band radar applications.

Advanced Power Technology

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Datasheet Details

Part number	0910-150M
Manufacturer	Advanced Power Technology
File Size	108.90 KB
Description	RF Transistor
Datasheet	0910-150M Datasheet
Additional preview pages of the 0910-150M datasheet.

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Full PDF Text Transcription

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0910 – 150M 0910-150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 400 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.

Published: Jul 28, 2021 |